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Электронный компонент: 2N5151

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Type 2N5151
Geometry
9702
Polarity PNP
Qual Level: JAN - JANS
Data Sheet No. 2N5151
Generic Part Number:
2N5151
REF: MIL-PRF-19500/545
Features:
Silicon power transistor for use in
high speed switching applications.
Housed in a
TO-39
case.
Also available in chip form using
the
9702
chip geometry.
The Min and Max limits shown are
per
MIL-PRF-19500/545
which
Semicoa meets in all cases.
Rating Symbol Rating Unit
Collector-Emitter Voltage V
CEO
80 V
Collector-Base Voltage V
CBO
100 V
Emitter-Base Voltage V
EBO
5.5 V
Collector Current, Continuous I
C
2 A
Collector Current, P
W
< 8.3 ms, < 1% duty cycle I
C
10 A
Reverse Pulse Energy 15 mJ
Power Disipation T
A
= 25
o
C ambient 1.0 Watt
Derate above 25
o
C 5.7 mW/
o
C
Operating Junction Temperature T
J
-65 to +200
o
C
Storage Temperature T
STG
-65 to +200
o
C
Maximum Ratings
T
C
= 25
o
C unless otherwise specified
P
T
TO-39
Data Sheet No. 2N5151
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
I
C
= 100 mA, I
B
= 0, pulsed
Base-Emitter Cutoff Current
V
EB
= 4 V, I
C
= 0
I
EBO1
---
1.0
A
V
EB
= 5.5 V, I
C
= 0
I
EBO2
---
1.0
mA
Collector-Emitter Cutoff Current
V
CE
= 60 V, V
BE
= 0
I
CES1
---
1.0
A
V
CE
= 100 V, V
BE
= 0
I
CES2
---
1.0
mA
V
CE
= 40 V, I
B
= 0
I
CEO
---
50
A
V
CE
= 60 V, V
BE
= +2 V, T
C
= 150
o
C
I
CEX
---
500
A
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
V
(BR)CBO
80
---
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
I
C
= 50 mA, V
CE
= 5 V
h
FE1
20
---
---
I
C
= 2.5 A, V
CE
= 5 V, pulsed
h
FE2
30
90
---
I
C
= 5.0 A, V
CE
= 5 V, pulsed
h
FE3
20
---
---
I
C
= 2.55 A, V
CE
= 5 V pulsed, T
C
= -55
o
C
h
FE4
15
---
---
Base-Emitter Voltage, Nonsaturted
V
CE
= 5 V, I
C
= 2.5 A, pulsed
V
BE
---
1.45
V dc
Base-Emitter Saturation Voltage
I
C
= 2.5 A, I
B
= 250 mA, pulsed
V
BE(sat)1
---
1.45
V dc
I
C
= 5 A, I
B
= 500 mA, pulsed
V
BE(sat)2
---
2.2
V dc
Collector-Emitter Saturation Voltage
I
C
= 2.5 A, I
B
= 250 mA, pulsed
V
CE(sat)1
---
0.75
V dc
I
C
= 5 A, I
B
= 500 mA, pulsed
V
CE(sat)2
---
1.5
V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
V
CE
= 5 V, I
C
= 500 mA, f = 10 MHz
Common Emitter, Small Signal Short Circuit
Forward Current Transfer Ratio
V
CE
= 5 V, I
C
= 100 mA, f = 1 kHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 1 MHz
h
fe
20
---
---
C
OBO
---
250
pF
---
|h
fe
|
6.0
---
Switching Time
Symbol
Min
Max
Unit
Delay Time
I
C
= 5 A, I
B1
= 500 mA
Storage Time
I
B2
= -500 mA
Fall Time
V
BE(off)
= 3.7 V
Turn-Off Time
R
L
= 6 ohms
s
t
ON
---
0.5
t
s
---
1.4
s
0.5
s
t
OFF
---
1.5
s
t
f
---